 |  |  | |
| PartNumber | IRG8P60N120KDPBF | IRG8P75N65UD1-EPBF | IRG8P60N120KD-EPBF |
| Description | IGBT Transistors 1200V IGBT GEN8 | MOSFET IGBT DISCRETES | IGBT Transistors 1200V IGBT GEN8 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | IGBT Transistors | MOSFET | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247AC-3 | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | 1.7 V |
| Maximum Gate Emitter Voltage | 30 V | - | 30 V |
| Continuous Collector Current at 25 C | 100 A | - | 100 A |
| Pd Power Dissipation | 420 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 60 A | - | 60 A |
| Brand | Infineon / IR | Infineon / IR | - |
| Gate Emitter Leakage Current | 400 nA | - | 400 nA |
| Product Type | IGBT Transistors | MOSFET | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | IGBTs | MOSFETs | - |
| Part # Aliases | SP001537660 | SP001533830 | - |
| Unit Weight | 0.015027 oz | - | 0.229281 oz |
| Tradename | - | StrongIRFET | - |
| Series | - | - | - |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Power Max | - | - | 420W |
| Reverse Recovery Time trr | - | - | 210ns |
| Current Collector Ic Max | - | - | 100A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 120A |
| Vce on Max Vge Ic | - | - | 2V @ 15V, 40A |
| Switching Energy | - | - | 2.8mJ (on), 2.3mJ (off) |
| Gate Charge | - | - | 345nC |
| Td on off 25°C | - | - | 40ns/240ns |
| Test Condition | - | - | 600V, 40A, 5 Ohm, 15V |
| Pd Power Dissipation | - | - | 420 W |
| Collector Emitter Voltage VCEO Max | - | - | 1200 V |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon / IR |
IRG8P60N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | |
| IRG8P75N65UD1PBF | MOSFET IGBT DISCRETES | ||
| IRG8P75N65UD1-EPBF | MOSFET IGBT DISCRETES | ||
Infineon Technologies |
IRG8P75N65UD1-EPBF | G8 650V 75A CO-PAK-247 | |
| IRG8P75N65UD1PBF | G8 650V 75A CO-PAK-247 | ||
| IRG8P60N120KD-EPBF | IGBT Transistors 1200V IGBT GEN8 | ||
| IRG8P60N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | ||
| IRG8P60N120KDEPBF | Nuovo e originale | ||
| IRG8P60N120KD | Nuovo e originale | ||
| IRG8R | Nuovo e originale | ||
| IRG8X475SA | Nuovo e originale |