 | | | |
| PartNumber | IRFR2905ZTR | IRFR2905ZTRL | IRFR2905ZPBF |
| Description | MOSFET N-CH 55V 42A DPAK | MOSFET N-CH 55V 42A DPAK | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC |
| Manufacturer | - | - | 10IR |
| Product Category | - | - | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 110 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 35 ns |
| Rise Time | - | - | 66 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 59 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Rds On Drain Source Resistance | - | - | 14.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 31 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Qg Gate Charge | - | - | 29 nC |
| Channel Mode | - | - | Enhancement |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR2905ZTRPBF | MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | |
| IRFR2905ZTRLPBF | MOSFET MOSFT 55V 59A 14.5mOhm 29nC | ||
| IRFR2905ZTRPBF-CUT TAPE | Nuovo e originale | ||
Infineon Technologies |
IRFR2905ZTR | MOSFET N-CH 55V 42A DPAK | |
| IRFR2905ZTRL | MOSFET N-CH 55V 42A DPAK | ||
| IRFR2905ZTRR | MOSFET N-CH 55V 42A DPAK | ||
| IRFR2905ZTRLPBF | MOSFET N-CH 55V 42A DPAK | ||
| IRFR2905ZTRRPBF | MOSFET N-CH 55V 42A DPAK | ||
| IRFR2905ZPBF | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC | ||
| IRFR2905ZTRPBF | MOSFET N-CH 55V 42A DPAK | ||
| IRFR2905Z | Trans MOSFET N-CH Si 55V 59A 3-Pin(2+Tab) DPAK T/R |