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| PartNumber | IRF8302MTRPBF | IRF8302MTR1PBF | IRF8302 |
| Description | MOSFET 30V N-Channel HEXFET Power MOSFET | MOSFET N CH 30V 31A MX | MOSFETs |
| Manufacturer | Infineon | - | IOR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOP-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 190 A | - | - |
| Rds On Drain Source Resistance | 2.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 35 nC | - | - |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | - | Single |
| Tradename | DirectFET | - | DirectFET |
| Packaging | Reel | - | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001555742 | - | - |
| Unit Weight | 0.019048 oz | - | 0.019048 oz |
| Package Case | - | - | SOIC-8 |
| Pd Power Dissipation | - | - | 104 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 190 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 2.7 mOhms |
| Qg Gate Charge | - | - | 35 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF8302MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | |
| IRF8302MTR1PBF | MOSFET N CH 30V 31A MX | ||
| IRF8302MTRPBF | MOSFET 30V N-Channel HEXFET Power MOSFET | ||
| IRF8302 | MOSFETs | ||
| IRF8302MTRPBF/84.08302.0 | Nuovo e originale |