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| PartNumber | IRF6643TRPBF | IRF6643TRPBF-CUT TAPE | IRF6643TR1PBF |
| Description | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | IGBT Transistors MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | |
| Manufacturer | Infineon | - | International Rectifier |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | DirectFET-MZ | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 6.2 A | - | - |
| Rds On Drain Source Resistance | 29 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 39 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | DirectFET | - | - |
| Packaging | Reel | - | Reel |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 16 S | - | - |
| Fall Time | 4.4 ns | - | 4.4 ns |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | 5 ns |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 9.2 ns | - | - |
| Part # Aliases | SP001570070 | - | - |
| Package Case | - | - | DirectFET-7 |
| Pd Power Dissipation | - | - | 89 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 6.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.9 V |
| Rds On Drain Source Resistance | - | - | 29 mOhms |
| Qg Gate Charge | - | - | 39 nC |
| Forward Transconductance Min | - | - | 16 S |