 | | | |
| PartNumber | IRF5810 | IRF5810TR | IRF5810TRPBF |
| Description | MOSFET 2P-CH 20V 2.9A 6TSOP | MOSFET 2P-CH 20V 2.9A 6-TSOP | MOSFET 2P-CH 20V 2.9A 6-TSOP |
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Category | FETs - Arrays | FETs - Arrays | FETs - Arrays |
| Series | HEXFETR | HEXFETR | HEXFETR |
| Packaging | Tube | Tape & Reel (TR) | Digi-ReelR |
| Package Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature | * | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP |
| FET Type | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | 960mW | 960mW | 960mW |
| Drain to Source Voltage Vdss | 20V | 20V | 20V |
| Input Capacitance Ciss Vds | 650pF @ 16V | 650pF @ 16V | 650pF @ 16V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | 2.9A | 2.9A | 2.9A |
| Rds On Max Id Vgs | 90 mOhm @ 2.9A, 4.5V | 90 mOhm @ 2.9A, 4.5V | 90 mOhm @ 2.9A, 4.5V |
| Vgs th Max Id | 1.2V @ 250μA | 1.2V @ 250μA | 1.2V @ 250μA |
| Gate Charge Qg Vgs | 9.6nC @ 4.5V | 9.6nC @ 4.5V | 9.6nC @ 4.5V |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| IRF5810TRPBF. | Nuovo e originale | ||
Infineon Technologies |
IRF5810 | MOSFET 2P-CH 20V 2.9A 6TSOP | |
| IRF5810TR | MOSFET 2P-CH 20V 2.9A 6-TSOP | ||
| IRF5810TRPBF | MOSFET 2P-CH 20V 2.9A 6-TSOP |