| PartNumber | IRF1404ZPBF | IRF1404ZGPBF | IRF1404ZSPBF |
| Description | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | MOSFET MOSFT 40V 190A 3.7mOhm 100nC | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 180 A | 190 A | 190 A |
| Rds On Drain Source Resistance | 2.7 mOhms | 3.7 mOhms | 3.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 100 nC | 100 nC | 100 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 200 W | 220 W | 220 W |
| Configuration | Single | Single | Single |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon / IR | Infineon Technologies |
| Forward Transconductance Min | 170 S | - | - |
| Fall Time | 58 ns | - | 58 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 110 ns | - | 110 ns |
| Factory Pack Quantity | 1000 | 50 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | - | 36 ns |
| Typical Turn On Delay Time | 18 ns | - | 18 ns |
| Part # Aliases | SP001574476 | SP001553874 | SP001559466 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.139332 oz |
| Channel Mode | - | - | Enhancement |
| Type | - | - | HEXFET Power MOSFET |