 |  | | |
| PartNumber | IPS65R1K0CEAKMA2 | IPS65R1K0CEAKMA1 | IPS65R1K0CEAKMA1 , 2SJ16 |
| Description | MOSFET CONSUMER | MOSFET N-CH 650V 4.3A TO-251-3 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PG-TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 7.2 A | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 15.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.2 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 6.6 ns | - | - |
| Part # Aliases | IPS65R1K0CE SP001724356 | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS65R1K0CEAKMA2 | MOSFET CONSUMER | |
| IPS65R1K0CEAKMA2 | CONSUMER - Rail/Tube (Alt: IPS65R1K0CEAKMA2) | ||
| IPS65R1K0CEAKMA1 | MOSFET N-CH 650V 4.3A TO-251-3 | ||
| IPS65R1K0CEAKMA1 , 2SJ16 | Nuovo e originale |