 | | |
| PartNumber | IPP60R099P7XKSA1 | IPP60R099P6XKSA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER PRICE/PERFORM |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 31 A | 37.9 A |
| Rds On Drain Source Resistance | 77 mOhms | 89 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 45 nC | 70 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 117 W | 278 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Series | CoolMOS P7 | CoolMOS P6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 15 ns | 10 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 89 ns | 50 ns |
| Typical Turn On Delay Time | 23 ns | 20 ns |
| Part # Aliases | IPP60R099P7 SP001647032 | IPP60R099P6 SP001114650 |
| Unit Weight | 0.063493 oz | 0.211644 oz |
| Height | - | 15.65 mm |
| Length | - | 10 mm |
| Width | - | 4.4 mm |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP60R099P7XKSA1 | MOSFET HIGH POWER_NEW | |
| IPP60R099P7XKSA1 | MOSFET N-CH 600V 31A TO220-3 | ||
| IPP60R099P6XKSA1 | MOSFET HIGH POWER PRICE/PERFORM |