| PartNumber | IPP60R750E6XKSA1 | IPP60R600E6XKSA1 | IPP60R600P7XKSA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPP60R750E6XKSA1 SP000842482 | IPP60R600E6XKSA1 SP000797630 | IPP60R600P7 SP001606032 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.063493 oz |
| RoHS | - | - | Y |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Id Continuous Drain Current | - | - | 6 A |
| Rds On Drain Source Resistance | - | - | 490 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 9 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 30 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Series | - | - | CoolMOS P7 |
| Transistor Type | - | - | 1 N-Channel |
| Fall Time | - | - | 19 ns |
| Rise Time | - | - | 6 ns |
| Factory Pack Quantity | - | - | 500 |
| Typical Turn Off Delay Time | - | - | 37 ns |
| Typical Turn On Delay Time | - | - | 7 ns |