 | | |
| PartNumber | IPP147N12N3 G | IPP147N12N3GXKSA1 |
| Description | MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | - |
| Id Continuous Drain Current | 56 A | - |
| Rds On Drain Source Resistance | 14.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 37 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 107 W | - |
| Configuration | Single | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 4 nS | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 nS | - |
| Factory Pack Quantity | 500 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 nS | - |
| Part # Aliases | IPP147N12N3GXK IPP147N12N3GXKSA1 SP000652742 | G IPP147N12N3 IPP147N12N3GXK SP000652742 |
| Unit Weight | 0.084199 oz | 0.211644 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP147N12N3 G | MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3 | |
| IPP147N12N3GXKSA1 | MOSFET N-CH 120V 56A TO220-3 | ||
| IPP147N12N3 G | Darlington Transistors MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3 | ||
Infineon Technologies |
IPP147N12N3GXKSA1 | MOSFET MV POWER MOS | |
| IPP147N12N3GXK | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP147N12N3GXKSA1) | ||
| IPP147N12N | Nuovo e originale | ||
| IPP147N12N3G(147N12) | Nuovo e originale | ||
| IPP147N12N3G,147N12N | Nuovo e originale | ||
| IPP147N12N3G | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |