IPP032N06N3GX

IPP032N06N3GXKSA1 vs IPP032N06N3GXK vs IPP032N06N3GXKSA1 , 2SD2

 
PartNumberIPP032N06N3GXKSA1IPP032N06N3GXKIPP032N06N3GXKSA1 , 2SD2
DescriptionMOSFET N-Ch 60V 120A TO220-3Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP032N06N3GXKSA1)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance2.6 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge124 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3IPP032N06-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min149 S--
Fall Time20 ns20 ns-
Product TypeMOSFET--
Rise Time120 ns120 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Part # AliasesG IPP032N06N3 IPP32N6N3GXK SP000680770--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-G IPP032N06N3 IPP032N06N3GXK SP000680770-
Package Case-TO-220-3-
Pd Power Dissipation-188 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-120 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-2.6 mOhms-
Qg Gate Charge-124 nC-
Forward Transconductance Min-149 S-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPP032N06N3GXKSA1 MOSFET N-Ch 60V 120A TO220-3
IPP032N06N3GXKSA1 Darlington Transistors MOSFET N-Ch 60V 120A TO220-3
IPP032N06N3GXK Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP032N06N3GXKSA1)
IPP032N06N3GXKSA1 , 2SD2 Nuovo e originale
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