| PartNumber | IPI70N10S3-12 | IPI70N10S312AKSA1 | IPI70N10S3L12AKSA1 |
| Description | MOSFET N-Ch 100V 70A I2PAK-3 OptiMOS-T | MOSFET N-CHANNEL_100+ | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 11.3 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | OptiMOS-T | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPI70N10S312AKSA1 IPI7N1S312XK SP000407124 | IPI70N10S3-12 IPI7N1S312XK SP000407124 | IPI70N10S3L-12 IPI7N1S3L12XK SP000427250 |
| Unit Weight | 0.073511 oz | 0.084199 oz | 0.084199 oz |