 | | | |
| PartNumber | IPI100N04S3 | IPI100N04S3-03M | IPI100N04S3-03 |
| Description | MOSFET N-Ch 40V 100A I2PAK-3 | MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T | |
| Manufacturer | - | Infineon Technologies | Infineon Technologies |
| Product Category | - | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | xPI100N04 | OptiMOS-T |
| Packaging | - | Reel | Tube |
| Part Aliases | - | IPI100N04S303MATMA2 IPI100N04S303MXT SP000465798 | IPI100N04S303AKSA1 IPI100N04S303XK SP000261223 |
| Unit Weight | - | 0.073511 oz | 0.084199 oz |
| Package Case | - | TO-262-3 | I2PAK-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Id Continuous Drain Current | - | 100 A | 100 A |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Rds On Drain Source Resistance | - | 2.5 mOhms | 3.3 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Configuration | - | - | Single |
| Pd Power Dissipation | - | - | 214 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 17 ns |
| Rise Time | - | - | 16 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Typical Turn Off Delay Time | - | - | 46 ns |
| Typical Turn On Delay Time | - | - | 30 ns |
| Channel Mode | - | - | Enhancement |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI100N04S303AKSA1 | MOSFET N-CHANNEL_30/40V | |
| IPI100N04S4H2AKSA1 | MOSFET N-CHANNEL_30/40V | ||
| IPI100N04S303MATMA2 | MOSFET N-CHANNEL 30/40V - Tape and Reel (Alt: IPI100N04S303MATMA2) | ||
| IPI100N04S3 | Nuovo e originale | ||
| IPI100N04S3-03M | MOSFET N-Ch 40V 100A I2PAK-3 | ||
| IPI100N04S3-03 | MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T | ||
Infineon Technologies |
IPI100N04S303AKSA1 | MOSFET N-CH 40V 100A TO262-3 | |
| IPI100N04S4H2AKSA1 | MOSFET N-CH 40V 100A TO262-3-1 |