IPI086

IPI086N10N3 G vs IPI086N10N vs IPI086N10N3

 
PartNumberIPI086N10N3 GIPI086N10NIPI086N10N3
DescriptionMOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance8.2 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height9.45 mm--
Length10.2 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandInfineon Technologies--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time42 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time31 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesIPI086N10N3GXKSA1 IPI86N1N3GXK SP000683070--
Unit Weight0.073511 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPI086N10N3 G MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
IPI086N10N3GXKSA1 MOSFET N-CH 100V 80A TO262-3
Infineon Technologies
Infineon Technologies
IPI086N10N3GXKSA1 MOSFET MV POWER MOS
IPI086N10N3GXK Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1)
IPI086N10N Nuovo e originale
IPI086N10N3 Nuovo e originale
IPI086N10N3G Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: IPI086N10N3 G)
IPI086N10N3G,086N10N Nuovo e originale
IPI086N10N3GXKSA1 , 2SD2 Nuovo e originale
IPI086N10NG Nuovo e originale
IPI086N10N3 G Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
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