| PartNumber | IPI032N06N3 G | IPI032N06N3GAKSA1 |
| Description | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 165 nC | 165 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 188 W | 188 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Tube | Tube |
| Height | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 75 S | 75 S |
| Fall Time | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 120 ns | 120 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 62 ns |
| Typical Turn On Delay Time | 35 ns | 35 ns |
| Part # Aliases | IPI032N06N3GAKSA1 IPI32N6N3GXK SP000680650 | G IPI032N06N3 IPI32N6N3GXK SP000680650 |
| Unit Weight | 0.084199 oz | 0.084199 oz |