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| PartNumber | IPDD60R050G7XTMA1 | IPDD60R050G7XTMA1-CUT TAPE | IPDD60R050G7 |
| Description | MOSFET HIGH POWER_NEW | Transistor MOSFET N-CH 600V 47A 10-Pin HDSOP T/R (Alt: IPDD60R050G7) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-HDSOP-10 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 47 A | - | - |
| Rds On Drain Source Resistance | 50 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 68 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 278 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 1700 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | - |
| Typical Turn On Delay Time | 22 ns | - | - |
| Part # Aliases | IPDD60R050G7 SP001632818 | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPDD60R050G7XTMA1 | MOSFET HIGH POWER_NEW | |
| IPDD60R050G7XTMA1 | MOSFET NCH 650V 135A PG-HDSOP-10 | ||
| IPDD60R050G7XTMA1-CUT TAPE | Nuovo e originale | ||
| IPDD60R050G7 | Transistor MOSFET N-CH 600V 47A 10-Pin HDSOP T/R (Alt: IPDD60R050G7) |