 | | | |
| PartNumber | IPD90N04S4-04 | IPD90N04S4-03 | IPD90N04S4-02 |
| Description | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 90 A | 90 A | 90 A |
| Rds On Drain Source Resistance | 4.1 mOhms | 2.7 mOhms | 2.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 33 nC | 66 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 71 W | 94 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 11 ns | 15 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 9 ns | 14 ns | - |
| Typical Turn On Delay Time | 10 ns | 14 ns | - |
| Part # Aliases | IPD90N04S404ATMA1 IPD9N4S44XT SP000646186 | IPD90N04S403ATMA1 IPD9N4S43XT SP000671630 | IPD90N04S402ATMA1 IPD9N4S42XT SP000673890 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD90N04S4-04 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | |
| IPD90N04S4L-04 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-03 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4L04ATMA1 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S405ATMA1 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S403ATMA1 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-02 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-05 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S402ATMA1 | MOSFET N-CH 40V 90A TO252-3-313 | ||
| IPD90N04S403ATMA1 | MOSFET N-CH 40V 90A TO252-3-313 | ||
| IPD90N04S4L04ATMA1 | MOSFET N-CH 40V 90A TO252-3-313 | ||
| IPD90N04S405ATMA1 | MOSFET N-CH 40V 86A TO252-3-313 | ||
| IPD90N04S404ATMA1 | MOSFET N-CH 40V 90A TO252-3-313 | ||
Infineon Technologies |
IPD90N04S404ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPD90N04S402ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPD90N04S403ATMA1-CUT TAPE | Nuovo e originale | ||
| IPD90N04S404ATMA1-CUT TAPE | Nuovo e originale | ||
| IPD90N04S405ATMA1-CUT TAPE | Nuovo e originale | ||
| IPD90N04S4-04 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-04(SP0006461 | Nuovo e originale | ||
| IPD90N04S4L-04(1) | Nuovo e originale | ||
| IPD90N04S4L-04. | Nuovo e originale | ||
| IPD90N04S4-02 | IGBT Transistors MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-03 | RF Bipolar Transistors MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4L-04 | RF Bipolar Transistors MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | ||
| IPD90N04S4-05 | RF Bipolar Transistors MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 |