IPD80R

IPD80R750P7ATMA1 vs IPD80R600P7ATMA1-CUT TAPE vs IPD80R750P7ATMA1-CUT TAPE

 
PartNumberIPD80R750P7ATMA1IPD80R600P7ATMA1-CUT TAPEIPD80R750P7ATMA1-CUT TAPE
DescriptionMOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDPAK-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance640 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation51 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
SeriesCoolMOS P7--
Transistor Type1 N-Channel--
BrandInfineon Technologies--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesIPD80R750P7 SP001644282--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD80R750P7ATMA1 MOSFET
IPD80R750P7ATMA1 MOSFET N-CH 800V 7A TO252-3
IPD80R900P7ATMA1 MOSFET N-CH 800V 6A TO252-3
IPD80R600P7ATMA1-CUT TAPE Nuovo e originale
IPD80R750P7ATMA1-CUT TAPE Nuovo e originale
IPD80R900P7ATMA1-CUT TAPE Nuovo e originale
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