IPD50R2

IPD50R280CEBTMA1 vs IPD50R280CEAUMA1 vs IPD50R280CEATMA1

 
PartNumberIPD50R280CEBTMA1IPD50R280CEAUMA1IPD50R280CEATMA1
DescriptionMOSFET N-Ch 500V 13A DPAK-2 CoolMOS CEMOSFET N-CH 550V 18.1A TO252MOSFET N-CH 500V 13A PG-TO252
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance280 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge32.6 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation92 W--
ConfigurationSingle--
TradenameCoolMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CE--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesIPD50R280CE IPD50R280CEXT SP000992082--
Unit Weight0.139332 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD50R2K0CEBTMA1 MOSFET N-Ch 500V 6.1A DPAK-2
IPD50R280CEBTMA1 MOSFET N-Ch 500V 13A DPAK-2 CoolMOS CE
Infineon Technologies
Infineon Technologies
IPD50R280CEAUMA1 MOSFET N-CH 550V 18.1A TO252
IPD50R280CEATMA1 MOSFET N-CH 500V 13A PG-TO252
IPD50R280CEBTMA1 MOSFET N-CH 500V 13A PG-TO252
IPD50R2K0CEAUMA1 MOSFET N-CH 500V 2.4A PG-TO252
IPD50R2K0CEBTMA1 MOSFET N-Ch 500V 6.1A DPAK-2
IPD50R280CE Trans MOSFET N-CH 550V 13A 3-Pin TO-252 T/R (Alt: IPD50R280CE)
IPD50R280CE , 2SD2210-T Nuovo e originale
IPD50R280CE(SP001117680 Nuovo e originale
IPD50R280CE(SP001117680) Nuovo e originale
IPD50R280CEATMA1 , 2SD22 Nuovo e originale
IPD50R280CEBTMA1 , 2SD22 Nuovo e originale
IPD50R2K0CE MOSFET N-Ch 500V 6.1A DPAK-2
IPD50R2K0CEBTMA1 , 2SD22 Nuovo e originale
Top