IPD35N10S3L

IPD35N10S3L-26 vs IPD35N10S3L26ATMA1

 
PartNumberIPD35N10S3L-26IPD35N10S3L26ATMA1
DescriptionMOSFET N-Ch 100V 35A DPAK-2 OptiMOS-TMOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current35 A35 A
Rds On Drain Source Resistance24 mOhms20 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge30 nC39 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation71 W71 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
TradenameOptiMOS-
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesOptiMOS-TXPD35N10
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time3 ns3 ns
Product TypeMOSFETMOSFET
Rise Time4 ns4 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns18 ns
Typical Turn On Delay Time6 ns6 ns
Part # AliasesIPD35N10S3L26ATMA1 IPD35N1S3L26XT SP000386184IPD35N10S3L-26 IPD35N1S3L26XT SP000386184
Unit Weight0.139332 oz0.139332 oz
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD35N10S3L-26 MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
IPD35N10S3L26ATMA1 MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
IPD35N10S3L26ATMA1 MOSFET N-CH 100V 35A TO252-3
IPD35N10S3L-26 IGBT Transistors MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
IPD35N10S3L26ATMA1-CUT TAPE Nuovo e originale
IPD35N10S3L26XT Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD35N10S3L26ATMA1)
IPD35N10S3L26 Nuovo e originale
IPD35N10S3L-26 3N10L26 Nuovo e originale
IPD35N10S3L-26(3N10L26) Nuovo e originale
Top