| PartNumber | IPD35N10S3L-26 | IPD35N10S3L26ATMA1 |
| Description | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 35 A | 35 A |
| Rds On Drain Source Resistance | 24 mOhms | 20 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 30 nC | 39 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 71 W | 71 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | OptiMOS-T | XPD35N10 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 3 ns | 3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | 4 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 18 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns |
| Part # Aliases | IPD35N10S3L26ATMA1 IPD35N1S3L26XT SP000386184 | IPD35N10S3L-26 IPD35N1S3L26XT SP000386184 |
| Unit Weight | 0.139332 oz | 0.139332 oz |