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| PartNumber | IPD26N06S2L35ATMA2 | IPD26N06S2L35ATMA1 |
| Description | MOSFET N-CHANNEL_55/60V | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 30 A | 30 A |
| Rds On Drain Source Resistance | 27 mOhms | 27 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 24 nC | 24 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 68 W | 68 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 18 ns | 18 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 26 ns |
| Typical Turn On Delay Time | 5 ns | 5 ns |
| Part # Aliases | IPD26N06S2L-35 SP001063630 | IPD26N06S2L-35 IPD26N06S2L35XT SP000252165 |
| Unit Weight | 0.139332 oz | 0.011993 oz |
| Series | - | XPD26N06 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD26N06S2L35ATMA2 | MOSFET N-CHANNEL_55/60V | |
| IPD26N06S2L35ATMA1 | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R | ||
| IPD26N06S2L35ATMA2 | MOSFET N-CH 55V 30A TO252-3 | ||
Infineon Technologies |
IPD26N06S2L35ATMA1 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | |
| IPD26N06S2L-35 | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | ||
| IPD26N06S2L35 | SmallSignalBipolarTransistor,0.3AI(C),140VV(BR)CEO,1-Element,NPN,Silicon |