 | | ||
| PartNumber | IPD06P005NATMA1 | IPD06P005LATMA1 | IPD06P005LSAUMA1 |
| Description | MOSFET | TRENCH 40<-<100V | MOSFET P-CH TO252-3 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 6.5 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - 10.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.9 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Part # Aliases | IPD06P005N | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD06P005NATMA1 | MOSFET | |
Infineon Technologies |
IPD06P005LATMA1 | TRENCH 40<-<100V | |
| IPD06P005NATMA1 | TRENCH 40<-<100V | ||
| IPD06P005LSAUMA1 | MOSFET P-CH TO252-3 | ||
| IPD06P005NSAUMA1 | MOSFET P-CH TO252-3 |