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| PartNumber | IPD042P03L3GATMA1 | IPD042P03L3GATMA1-CUT TAPE | IPD042P03L3GATMA1 , 2SD1 |
| Description | MOSFET SMALL SIGNAL+P-CH | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 6.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 131 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 65 S | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 167 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 89 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Part # Aliases | G IPD042P03L3 SP001127836 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD042P03L3GATMA1 | MOSFET SMALL SIGNAL+P-CH | |
| IPD042P03L3GATMA1 | MOSFET P-CH 30V 70A TO252-3 | ||
| IPD042P03L3GATMA1-CUT TAPE | Nuovo e originale | ||
| IPD042P03L3GATMA1 , 2SD1 | Nuovo e originale |