IPD03

IPD03N03LA G vs IPD03N03LAG vs IPD03N03LAG PB-FREE

 
PartNumberIPD03N03LA GIPD03N03LAGIPD03N03LAG PB-FREE
DescriptionMOSFET N-Ch 25V 90A DPAK-2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance5.1 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min113 S / 56 S--
Fall Time6.6 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.139332 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD03N03LB G MOSFET N-Ch 30V 90A DPAK-2
Infineon Technologies
Infineon Technologies
IPD03N03LA G MOSFET N-CH 25V 90A TO-252
IPD03N03LB G MOSFET N-CH 30V 90A TO-252
IPD03N03LAG Nuovo e originale
IPD03N03LAG PB-FREE Nuovo e originale
IPD03N03LBG Nuovo e originale
IPD03N03LB Nuovo e originale
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