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| PartNumber | IPB65R095C7ATMA1 | IPB65R095C7ATMA2 | IPB65R095C7 |
| Description | MOSFET N-Ch 700V 100A D2PAK-2 | MOSFET N-CH TO263-3 | MOSFET N-Ch 700V 100A D2PAK-2 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 24 A | - | - |
| Rds On Drain Source Resistance | 84 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 128 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | IPB65R095C7 SP001080124 | - | - |
| Unit Weight | 0.068654 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R095C7ATMA1 | MOSFET N-Ch 700V 100A D2PAK-2 | |
Infineon Technologies |
IPB65R095C7ATMA2 | MOSFET N-CH TO263-3 | |
| IPB65R095C7ATMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 100A D2PAK-2 | ||
| IPB65R095C7 | MOSFET N-Ch 700V 100A D2PAK-2 |