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| PartNumber | IPB60R210CFD7ATMA1 | IPB60R250CPATMA1 | IPB60R230P6ATMA1 |
| Description | MOSFET | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | MOSFET N-CH 600V 16.8A 3TO263 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB60R210CFD7 SP002621142 | IPB60R250CP IPB60R250CPXT SP000358140 | - |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-263-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Rds On Drain Source Resistance | - | 220 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 35 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 104 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | CoolMOS | - |
| Height | - | 4.4 mm | - |
| Length | - | 10 mm | - |
| Series | - | XPB60R250 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 9.25 mm | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 17 ns | - |
| Typical Turn Off Delay Time | - | 110 ns | - |
| Typical Turn On Delay Time | - | 40 ns | - |
| Unit Weight | - | 0.139332 oz | - |