 |  | | |
| PartNumber | IPB200N25N3 G | IPB200N25N | IPB200N25N3 |
| Description | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 64 A | - | - |
| Rds On Drain Source Resistance | 17.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 86 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 61 S | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | 20 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | 45 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | IPB200N25N3GATMA1 IPB2N25N3GXT SP000677896 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | IPB200N25N3GATMA1 IPB200N25N3GXT SP000677896 | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 300 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 64 A | - |
| Vds Drain Source Breakdown Voltage | - | 250 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 20 mOhms | - |
| Qg Gate Charge | - | 64 nC | - |
| Forward Transconductance Min | - | 122 S 61 S | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N25N3 G | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | |
| IPB200N25N3GATMA1 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
| IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | ||
| IPB200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB200N25N | Nuovo e originale | ||
| IPB200N25N3 | Nuovo e originale | ||
| IPB200N25N3 G | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) | ||
| IPB200N25N3 G(SP0006778 | Nuovo e originale | ||
| IPB200N25N3G(SP00067789 | Nuovo e originale | ||
| IPB200N25N3G(SP000677896 | Nuovo e originale | ||
| IPB200N25N3GXT | Nuovo e originale |