| PartNumber | IPB180N06S4H1ATMA2 | IPB180N06S4H1ATMA1 |
| Description | MOSFET N-Ch 60V 180A D2PAK-6 | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 180 A | 180 A |
| Rds On Drain Source Resistance | 1.7 mOhms | 1.3 mOhms |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | IPB180N06 | XPB180N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPB180N06S4-H1 IPB18N6S4H1XT SP001028786 | IPB180N06S4-H1 IPB180N06S4H1XT SP000415562 |
| Unit Weight | 0.056438 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 270 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 250 W |
| Channel Mode | - | Enhancement |
| Fall Time | - | 15 ns |
| Rise Time | - | 5 ns |
| Typical Turn Off Delay Time | - | 60 ns |
| Typical Turn On Delay Time | - | 30 ns |