IPB107N20NA

IPB107N20NAXT vs IPB107N20NA vs IPB107N20NAATMA1

 
PartNumberIPB107N20NAXTIPB107N20NAIPB107N20NAATMA1
DescriptionMOSFET N-Ch 200V 88A D2PAK-2MOSFET N-Ch 200V 88A D2PAK-2MOSFET Mosfet, DCtoDC Nchannel 200V
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V200 V
Id Continuous Drain Current88 A88 A88 A
Rds On Drain Source Resistance9.6 mOhms9.6 mOhms9.6 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge87 nC87 nC87 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation300 W300 W300 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height4.4 mm4.4 mm4.4 mm
Length10 mm10 mm10 mm
SeriesOptiMOS 3OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time11 ns11 ns11 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time26 ns26 ns26 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time41 ns41 ns41 ns
Typical Turn On Delay Time18 ns18 ns18 ns
Part # AliasesIPB107N20NAATMA1 SP000877674IPB107N20NAATMA1 IPB17N2NAXT SP000877674IPB107N20NA IPB17N2NAXT SP000877674
Unit Weight0.068654 oz0.077603 oz0.079014 oz
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPB107N20NAXT MOSFET N-Ch 200V 88A D2PAK-2
IPB107N20NA MOSFET N-Ch 200V 88A D2PAK-2
IPB107N20NAATMA1 MOSFET Mosfet, DCtoDC Nchannel 200V
IPB107N20NAATMA1 MOSFET N-CH 200V 88A TO263-3
IPB107N20NAXT MOSFET N-Ch 200V 88A D2PAK-2
IPB107N20NA - Bulk (Alt: IPB107N20NA)
IPB107N20NA 107N20NA Nuovo e originale
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