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| PartNumber | IPB048N15N5ATMA1 | IPB048N15N5LFATMA1 |
| Description | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 100 nC | 84 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C |
| Pd Power Dissipation | 300 W | 313 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | - |
| Length | 10 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 59 S | 17 S |
| Fall Time | 37 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5.3 ns | 48 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 4.5 ns | 42 ns |
| Typical Turn On Delay Time | 19.6 ns | 8 ns |
| Part # Aliases | IPB048N15N5 SP001279596 | IPB048N15N5LF SP001503860 |
| Unit Weight | 0.077603 oz | 0.077603 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB048N15N5ATMA1 | MOSFET | |
| IPB048N15N5LFATMA1 | MOSFET | ||
| IPB048N15N5LFATMA1 | MOSFET N-CH 150V 120A TO263-3 | ||
| IPB048N15N5ATMA1 | MOSFET N-CH 150V 120A TO263-3 | ||
| IPB048N15N5ATMA1-CUT TAPE | Nuovo e originale |