| PartNumber | IPB034N03L G | IPB034N06L3 G | IPB034N03LGATMA1 |
| Description | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | MOSFET N-CH 30V 80A TO-263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 60 V | - |
| Id Continuous Drain Current | 80 A | 90 A | - |
| Rds On Drain Source Resistance | 3.4 mOhms | 2.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 94 W | 167 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5.4 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6.4 ns | 78 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 64 ns | - |
| Typical Turn On Delay Time | 9.2 ns | 25 ns | - |
| Part # Aliases | IPB034N03LGATMA1 IPB34N3LGXT SP000304126 | IPB034N06L3GATMA1 IPB34N6L3GXT SP000398062 | - |
| Unit Weight | 0.056438 oz | 0.068654 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Qg Gate Charge | - | 79 nC | - |
| Forward Transconductance Min | - | 77 S | - |