 |  | | |
| PartNumber | HN2C01FEYTE85LF | HN2C01FEYTE85LFCT-ND | HN2C01FEYTE85LFDKR-ND |
| Description | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 60 MHz | - | - |
| Series | HN2C01 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 150 mA | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
HN2C01FEYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | |
| HN2C01FEYTE85LF | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A | ||
| HN2C01FEYTE85LFCT-ND | Nuovo e originale | ||
| HN2C01FEYTE85LFDKR-ND | Nuovo e originale | ||
| HN2C01FEYTE85LFTR-ND | Nuovo e originale |