GB1

GB100XCP12-227 vs GB10MPS17-247 vs GB10S05K01

 
PartNumberGB100XCP12-227GB10MPS17-247GB10S05K01
DescriptionIGBT Modules 1200V 100A SIC IGBT CoPakSchottky Diodes & Rectifiers 1700V 25A SiC Power Schottky DiodeSwitching Power Supplies
ManufacturerGeneSiC SemiconductorGeneSiC SemiconductorSL Power
Product CategoryIGBT ModulesSchottky Diodes & RectifiersSwitching Power Supplies
RoHSYY-
TechnologySiCSiC-
ProductIGBT Silicon Carbide ModulesSchottky Silicon Carbide DiodesSwitching Supplies
ConfigurationIGBT-InverterSingle-
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.9 V--
Gate Emitter Leakage Current400 nA--
Package / CaseSOT-227TO-247-2-
Minimum Operating Temperature- 40 C- 55 C- 25 C
Maximum Operating Temperature+ 175 C+ 175 C+ 70 C
PackagingBulkTube-
SeriesGB100XCP12-GB10
BrandGeneSiC SemiconductorGeneSiC SemiconductorCondor / SL Power
Mounting StyleSMD/SMTThrough HoleChassis
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT ModulesSchottky Diodes & RectifiersSwitching Power Supplies
Factory Pack Quantity1030120
SubcategoryIGBTsDiodes & RectifiersAC-DC Power Supply
Unit Weight1.058219 oz-3.527396 oz
If Forward Current-25 A-
Vrrm Repetitive Reverse Voltage-1.7 kV-
Vf Forward Voltage-1.45 V-
Ifsm Forward Surge Current-65 A-
Ir Reverse Current-5 uA-
Pd Power Dissipation-190 W-
Vr Reverse Voltage-1.7 kV-
Output Voltage Channel 1--5 VDC
Number of Outputs--1 Output
Output Power--10 W
Open Frame/Enclosed--Open Frame
Input Voltage--90 VAC to 264 VAC
Output Current Channel 1--2 A
Industry--Medical, Industrial
Isolation Voltage--4 kVrms
Length--86 mm
Width--41 mm
Height--25 mm
Approvals--EN/IEC/UL60601-1, EN/IEC/UL62368-1
Input Frequency--47 Hz to 63 Hz
Operating Temperature Range--- 25 C to + 70 C
Type--AC-DC
Load Regulation--Regulated
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  • GB1 263
Produttore Parte # Descrizione RFQ
GeneSiC Semiconductor
GeneSiC Semiconductor
GB100XCP12-227 IGBT Modules 1200V 100A SIC IGBT CoPak
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Condor / SL Power
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GeneSiC Semiconductor
GeneSiC Semiconductor
GB100XCP12-227 IGBT 1200V 100A SOT-227
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