FQP3N9

FQP3N90 vs FQP3N90C vs FQP3N90FI

 
PartNumberFQP3N90FQP3N90CFQP3N90FI
DescriptionMOSFET 900V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current3.6 A--
Rds On Drain Source Resistance4.25 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation130 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.050717 oz--
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP3N90 MOSFET 900V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQP3N90 MOSFET N-CH 900V 3.6A TO-220
FQP3N90C Nuovo e originale
FQP3N90FI Nuovo e originale
FQP3N9O Nuovo e originale
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