| PartNumber | FQP19N20 | FQP19N10L | FQP19N10 |
| Description | MOSFET 200V N-Channel QFET | MOSFET 100V N-Ch QFET Logic Level | MOSFET 100V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | 100 V |
| Id Continuous Drain Current | 19.4 A | 19 A | 19 A |
| Rds On Drain Source Resistance | 150 mOhms | 100 mOhms | 100 mOhms |
| Vgs Gate Source Voltage | 30 V | 20 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 140 W | 75 W | 75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | QFET | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 16.3 mm | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQP19N20 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 14.5 S | 15 S | 12 S |
| Fall Time | 80 ns | 140 ns | 65 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 190 ns | 410 ns | 150 ns |
| Factory Pack Quantity | 1000 | 50 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 20 ns | 20 ns |
| Typical Turn On Delay Time | 20 ns | 14 ns | 7.5 ns |
| Part # Aliases | FQP19N20_NL | - | FQP19N10_NL |
| Unit Weight | 0.063493 oz | 0.090478 oz | 0.050717 oz |