 |  | | |
| PartNumber | FQE10N20CTU | FQE10N20C | FQE10N20LC |
| Description | MOSFET 200V N-Channel Adv Q-FET C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-126-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 360 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 12.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 11 mm | - | - |
| Length | 8 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 3.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 4.5 S | - | - |
| Fall Time | 72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 92 ns | - | - |
| Factory Pack Quantity | 60 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | FQE10N20CTU_NL | - | - |
| Unit Weight | 0.014110 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQE10N20CTU | MOSFET 200V N-Channel Adv Q-FET C-Series | |
| FQE10N20C | Nuovo e originale | ||
| FQE10N20LC | Nuovo e originale | ||
ON Semiconductor |
FQE10N20CTU | MOSFET N-CH 200V 4A TO-126 | |
| FQE10N20LCTU | MOSFET N-CH 200V 4A TO-126 |