FQB7N6

FQB7N60TM vs FQB7N60 vs FQB7N60M

 
PartNumberFQB7N60TMFQB7N60FQB7N60M
DescriptionMOSFET 600V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current7.4 A--
Rds On Drain Source Resistance1 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB7N60--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.4 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.046296 oz--
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB7N60TM MOSFET 600V N-Channel QFET
FQB7N60TM-WS MOSFET 600V 7.4A 1Ohm N-Channel
FQB7N65CTM MOSFET 650V 7A NCH MOSFET
FQB7N60 Nuovo e originale
FQB7N60M Nuovo e originale
FQB7N60TM-NL Nuovo e originale
FQB7N60Z Nuovo e originale
FQB7N65 Nuovo e originale
FQB7N65C Nuovo e originale
FQB7N60TM_WS RF Bipolar Transistors MOSFET 600V 7.4A 1Ohm N-Channel
ON Semiconductor
ON Semiconductor
FQB7N60TM-WS MOSFET N-CH 600V 7.4A D2PAK
FQB7N65CTM MOSFET N-CH 650V 7A D2PAK
FQB7N60TM Darlington Transistors MOSFET 600V N-Channel QFET
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