 |  | | |
| PartNumber | FQB70N08TM | FQB70N06 | FQB70N08 |
| Description | MOSFET 80V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 70 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 41 S | - | - |
| Fall Time | 145 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 300 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB70N08TM | MOSFET 80V N-Channel QFET | |
| FQB70N06 | Nuovo e originale | ||
| FQB70N08 | Nuovo e originale | ||
| FQB70N08TM-NL | Nuovo e originale | ||
| FQB70N10 | Nuovo e originale | ||
| FQB70N10TM-NL | Nuovo e originale | ||
ON Semiconductor |
FQB70N08TM | MOSFET N-CH 80V 70A D2PAK | |
| FQB70N10TM_AM002 | MOSFET N-CH 100V 57A D2PAK | ||
| FQB70N10TM | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |