 |  | | |
| PartNumber | FQB5N60CTM | FQB5N60C | FQB5N60CTM-NL |
| Description | MOSFET N-CH/600V/5A/QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.6 S | - | - |
| Fall Time | 46 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | FQB5N60CTM_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB5N60CTM-WS | MOSFET 600V,4.5A NCH MOSFET | |
| FQB5N60CTM | MOSFET N-CH/600V/5A/QFET | ||
| FQB5N60C | Nuovo e originale | ||
| FQB5N60CTM-NL | Nuovo e originale | ||
| FQB5N60CTM_WS | IGBT Transistors MOSFET 600V,4.5A NCH MOSFET | ||
ON Semiconductor |
FQB5N60CTM | MOSFET N-CH 600V 4.5A D2PAK | |
| FQB5N60CTM-WS | MOSFET N-CH 600V 4.5A |