FQB30N06L

FQB30N06LTM vs FQB30N06L vs FQB30N06LT

 
PartNumberFQB30N06LTMFQB30N06LFQB30N06LT
DescriptionMOSFET 60V N-Channel QFET Logic Level
ManufacturerON Semiconductor-FAIRCHILD
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation3.75 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height4.83 mm--
Length10.67 mm--
SeriesFQB30N06L--
Transistor Type1 N-Channel-1 N-Channel
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min24 S--
Fall Time110 ns-110 ns
Product TypeMOSFET--
Rise Time210 ns-210 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns-60 ns
Typical Turn On Delay Time15 ns-15 ns
Unit Weight0.046296 oz-0.046296 oz
Package Case--TO-252-3
Pd Power Dissipation--3.75 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--32 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--35 mOhms
Forward Transconductance Min--24 S
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB30N06LTM MOSFET 60V N-Channel QFET Logic Level
FQB30N06L Nuovo e originale
FQB30N06LT Nuovo e originale
FQB30N06LTM-NL Nuovo e originale
ON Semiconductor
ON Semiconductor
FQB30N06LTM MOSFET N-CH 60V 32A D2PAK
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