 |  |  | |
| PartNumber | FP50R06W2E3 | FP50R06W2E3B11BOMA1 | FP50R06W2E3BOMA1 |
| Description | IGBT Modules IGBT 600V 50A | IGBT MODULE VCES 600V 50A | IGBT MODULE 600V 450A |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.45 V | - | - |
| Continuous Collector Current at 25 C | 65 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 175 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 15 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FP50R06W2E3BOMA1 SP000375909 | - | - |
| Unit Weight | 1.375685 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
FP50R06W2E3_B11 | IGBT Modules IGBT 600V 50A | |
| FP50R06W2E3 | IGBT Modules IGBT 600V 50A | ||
| FP50R06W2E3B11BOMA1 | IGBT MODULE VCES 600V 50A | ||
| FP50R06W2E3BOMA1 | IGBT MODULE 600V 450A | ||
| FP50R06W2E3ENG | Nuovo e originale | ||
| FP50R06W2E3_B11 | IGBT Modules IGBT 600V 50A | ||
| FP50R06W2E3 | IGBT Modules IGBT 600V 50A |