FP50R06K

FP50R06KE3 vs FP50R06KE3BOSA1 vs FP50R06KE3G

 
PartNumberFP50R06KE3FP50R06KE3BOSA1FP50R06KE3G
DescriptionIGBT Modules N-CH 600V 60AIGBT MODULE VCES 600V 50AIGBT Modules N-CH 600V 60A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationArray 7--
Collector Emitter Voltage VCEO Max600 V--
Continuous Collector Current at 25 C60 A--
Package / CaseEcono 2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP50R06KE3BOSA1 SP000091922--
Unit Weight6.349313 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
FP50R06KE3 IGBT Modules N-CH 600V 60A
FP50R06KE3BOSA1 IGBT MODULE VCES 600V 50A
FP50R06KE3G IGBT Modules N-CH 600V 60A
FP50R06KE3_B13_ENG Nuovo e originale
FP50R06KE3 IGBT Modules N-CH 600V 60A
FP50R06KE3GBOSA1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
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