FGD3N60

FGD3N60UNDF vs FGD3N60LSDTM vs FGD3N60LSDTM-T

 
PartNumberFGD3N60UNDFFGD3N60LSDTMFGD3N60LSDTM-T
DescriptionIGBT Transistors 600V, 3A Short Circuit Rated IGBTIGBT Transistors 600V IGBT HID ApplicationINTEGRATED CIRCUIT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-252-3DPAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.4 V--
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C6 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFGD3N60UNDFFGD3N60LSD-
PackagingReelReel-
Continuous Collector Current Ic Max3 A6 A-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Gate Emitter Leakage Current10 uA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25002500-
SubcategoryIGBTsIGBTs-
Unit Weight0.009184 oz0.009171 oz-
Qualification-AEC-Q101-
Height-2.3 mm-
Length-6.6 mm-
Width-6.1 mm-
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGD3N60UNDF IGBT Transistors 600V, 3A Short Circuit Rated IGBT
FGD3N60LSDTM IGBT Transistors 600V IGBT HID Application
ON Semiconductor
ON Semiconductor
FGD3N60LSDTM IGBT Transistors 600V IGBT HID Application
FGD3N60UNDF IGBT Transistors 600V, 3A Short Circuit Rated IGBT
FGD3N60LSDTM-T INTEGRATED CIRCUIT
FGD3N60LLSD Nuovo e originale
FGD3N60LSD Nuovo e originale
FGD3N60LSDTF Nuovo e originale
FGD3N60LSD_F085 Nuovo e originale
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