FGB5

FGB5N60UNDF vs FGB50N33 vs FGB50N33BT

 
PartNumberFGB5N60UNDFFGB50N33FGB50N33BT
DescriptionIGBT Transistors 600V 5A NPT IGBT
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-263AB-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.4 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C10 A--
Pd Power Dissipation73.5 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFGB5N60UNDF--
PackagingReel--
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current+/- 10 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Unit Weight0.046296 oz--
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGB5N60UNDF IGBT Transistors 600V 5A NPT IGBT
ON Semiconductor
ON Semiconductor
FGB5N60UNDF IGBT Transistors 600V 5A NPT IGBT
FGB50N33 Nuovo e originale
FGB50N33BT Nuovo e originale
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