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| PartNumber | FF100R12RT4 | FF100R12KS4 | FF100R12KS4HOSA1 |
| Description | IGBT Modules IGBT Module w/ IGBT & Diode | IGBT Modules 1200V 100A DUAL | IGBT MODULE VCES 1700V 1000A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | N | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2 V | 3.2 V | - |
| Gate Emitter Leakage Current | 100 nA | 400 nA | - |
| Pd Power Dissipation | 555 W | 780 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 125 C | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF100R12RT4HOSA1 SP000624754 | FF100R12KS4HOSA1 SP000100705 | - |
| Unit Weight | 5.643834 oz | 12 oz | - |
| Configuration | - | Dual | - |
| Continuous Collector Current at 25 C | - | 150 A | - |
| Package / Case | - | 62 mm | - |
| Height | - | 30.5 mm | - |
| Length | - | 106.4 mm | - |
| Width | - | 61.4 mm | - |
| Mounting Style | - | Chassis Mount | - |