FDD9407L

FDD9407L-F085 vs FDD9407L vs FDD9407L_F085

 
PartNumberFDD9407L-F085FDD9407LFDD9407L_F085
DescriptionMOSFET 40V 100A N-Chnl Pwr Trench MOSFETN-CHANNEL POWERTRENCH MOSFET
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.9 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge96 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation227 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height2.39 mm--
Length6.73 mm--
SeriesFDD9407L_F085PowerTrench-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time21 ns21 ns-
Product TypeMOSFET--
Rise Time35 ns35 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time58 ns58 ns-
Typical Turn On Delay Time17 ns17 ns-
Part # AliasesFDD9407L_F085--
Unit Weight0.009184 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-227 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-1 V-
Rds On Drain Source Resistance-2.9 mOhms-
Qg Gate Charge-96 nC-
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD9407L-F085 MOSFET 40V 100A N-Chnl Pwr Trench MOSFET
FDD9407L Nuovo e originale
FDD9407L_F085 N-CHANNEL POWERTRENCH MOSFET
ON Semiconductor
ON Semiconductor
FDD9407L-F085 MOSFET N-CH 40V 100A
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