FDD6

FDD6N50TM_WS

 
PartNumberFDD6N50TM_WS
Description6A, 500V UNIFET IN D-PAK (TO25
ManufacturerFairchild Semiconductor
Product CategoryFETs - Single
SeriesUniFET
PackagingDigi-ReelR Alternate Packaging
Unit Weight0.009184 oz
Mounting StyleSMD/SMT
Package CaseTO-252-3, DPak (2 Leads + Tab), SC-63
TechnologySi
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Number of Channels1 Channel
Supplier Device PackageD-Pak
ConfigurationSingle
FET TypeMOSFET N-Channel, Metal Oxide
Power Max89W
Transistor Type1 N-Channel
Drain to Source Voltage Vdss500V
Input Capacitance Ciss Vds9400pF @ 25V
FET FeatureStandard
Current Continuous Drain Id 25°C6A (Tc)
Rds On Max Id Vgs900 mOhm @ 3A, 10V
Vgs th Max Id5V @ 250μA
Gate Charge Qg Vgs16.6nC @ 10V
Pd Power Dissipation89 W
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Fall Time35 ns
Rise Time55 ns
Vgs Gate Source Voltage30 V
Id Continuous Drain Current6 A
Vds Drain Source Breakdown Voltage500 V
Rds On Drain Source Resistance760 mOhms
Transistor PolarityN-Channel
Typical Turn Off Delay Time25 ns
Typical Turn On Delay Time6 ns
Channel ModeEnhancement
Produttore Parte # Descrizione RFQ
FDD6N50TM_WS 6A, 500V UNIFET IN D-PAK (TO25
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