 |  | | |
| PartNumber | FDBL86366-F085 | FDBL86366 | FDBL86366_F085 |
| Description | MOSFET N-Channel Power Trench MOSFET | N-CHANNEL POWER TRENCH MOSFET | |
| Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | H-PSOF-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 220 A | - | - |
| Rds On Drain Source Resistance | 6.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 86 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | Reel |
| Height | 2.4 mm | - | - |
| Length | 10.48 mm | - | - |
| Series | FDBL86366_F085 | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 17 ns | - | 17 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 34 ns | - | 34 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | 40 ns |
| Typical Turn On Delay Time | 30 ns | - | 30 ns |
| Part # Aliases | FDBL86366_F085 | - | - |
| Unit Weight | 0.029985 oz | - | 0.029986 oz |
| Package Case | - | - | MO-299A-8 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 220 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 6.1 mOhms |
| Qg Gate Charge | - | - | 86 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDBL86366-F085 | MOSFET N-Channel Power Trench MOSFET | |
| FDBL86366 | Nuovo e originale | ||
| FDBL86366_F085 | N-CHANNEL POWER TRENCH MOSFET | ||
ON Semiconductor |
FDBL86366-F085 | MOSFET N-CH 80V 220A PSOF8 |