DPLS350Y

DPLS350Y-13 vs DPLS350Y vs DPLS350Y-13-GIGA

 
PartNumberDPLS350Y-13DPLS350YDPLS350Y-13-GIGA
DescriptionBipolar Transistors - BJT 1000mW -50Vceo
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 390 mV- 390 mV-
Maximum DC Collector Current- 5 A- 5 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDPLS350DPLS350-
Height1.5 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min80 at - 3 A, - 2 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-1W-
Transistor Type-PNP-
Current Collector Ic Max-3A-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-200 @ 1A, 2V-
Vce Saturation Max Ib Ic-390mV @ 300mA, 3A-
Current Collector Cutoff Max-100nA-
Frequency Transition-100MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-- 50 V-
Collector Base Voltage VCBO-- 50 V-
Emitter Base Voltage VEBO-- 6 V-
DC Collector Base Gain hfe Min-80 at - 3 A - 2 V-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
DPLS350Y Nuovo e originale
DPLS350Y-13-GIGA Nuovo e originale
DPLS350Y-13-GIGA PB-FRE Nuovo e originale
DPLS350Y-7-F Nuovo e originale
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
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