| PartNumber | DMTH6016LFDFWQ-7R | DMTH6016LFDFWQ-7 | DMTH6016LFDFWQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 9.4 A | 9.4 A | 9.4 A |
| Rds On Drain Source Resistance | 18 mOhms | 18 mOhms | 18 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 15.3 nC | 15.3 nC | 15.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 2.3 W | 2.3 W | 2.3 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | DMTH6016LFDFWQ | DMTH6016LFDFWQ | DMTH6016LFDFWQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 7.2 ns | 7.2 ns | 7.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.2 ns | 4.2 ns | 4.2 ns |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14.5 ns | 14.5 ns | 14.5 ns |
| Typical Turn On Delay Time | 3.2 ns | 3.2 ns | 3.2 ns |